3SK162
Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)
3SK162 datasheet
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Маркировка3SK162
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ПроизводительRenesas Electronics
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ОписаниеRenesas Electronics 3SK162 Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 4 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Case Connection: SOURCE Number of Elements: 1 Transistor Application: AMPLIFIER Transistor Element Material: SILICON Power Dissipation Ambient-Max: 0.1500 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: DUAL GATE, DEPLETION Transistor Type: RF SMALL SIGNAL Power Gain-Min (Gp): 18 dB Drain Current-Max (ID): 0.0350 A Highest Frequency Band: VERY HIGH FREQUENCY BAND
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Количество страниц3 шт.
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Форматы файлаHTML, PDF
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